Niloufar Raeis-Hosseini


Dr. Niloufar RaeisHosseini has received Ph.D. in materials science and engineering focusing on nanoelectronics including ReRAMs and artificial synapses from Pohang University of Science and Technology (POSTECH), Korea in 2016, followed by a postdoctoral fellowship in nanophotonics and metamaterials at the department of chemical engineering of POSTECH from 2016 to present. In 2002, She received her M.Sc. in mining engineering from Isfahan University of Technology, Iran. She is the first author of over 22 journals and conference papers. Additionally, She has two national patents on the biodegradable memory device and artificial synapses. Her work on nanoelectronic devices was featured on the front cover of Advanced Functional Materials, and achievement on a novel biocompatible ReRAM was covered by several media outlets. She is a recipient of “National Research Foundation (NRF) Grant” for postdoctoral fellow and various awards including Brain Korea (BK 21 Plus) international scholarship for postdoctoral scholars, Brain Korea (BK 21 Plus) full scholarship for international graduate study. She was also nominated as the young scientist in the semiconductor industry for two consequent years in 2014 and 2015. She is the winner of SK Hynix Fellowship program owing to her new idea on nonvolatile memories and neuromorphic devices.

Research Interests:

Her research interest mainly includes Nanoelectronics, Neuromorphic devices and memories

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